Type II mid-infrared quantum well laser

Details Type II mid-infrared quantum well laser Type II mid-infrared quantum well laser

2007-10-09

2007-10-09

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045012

Reexamination Certificate

active

10489238

ABSTRACT:
A mid-infrared emitting indirect bandgap quantum well semiconductor laser with an optical waveguide structure having an active waveguide core. The active waveguide core comprises at least one repetition of a sub-region comprising in the following order a first wide bandgap layer, a first conduction band layer of InAs, a valence band layer of Ga(1-x)InxSb where x≧0.7, preferably of InSB (ie. x=1), having a thickness of less than 15 Angstroms, a second conduction band layer of InAs and a second wide bandgap barrier layer. The barrier layers co-operate to provide electrical confinement for the carriers within the intervening conduction band and valence band layers and optical confinement in the active core region is provided by the optical waveguide structure.

REFERENCES:
patent: 5189679 (1993-02-01), Derry et al.
patent: 5251225 (1993-10-01), Eglash et al.
patent: 5793787 (1998-08-01), Meyer et al.
patent: WO 01/26192 (2001-04-01), None
Grein et al, “Theoretical Performance of InAs/InxGa1-SB superlattice-based midwave infrared lasers”, Journal of Applied Physics, pp. 1940-1942 (1994).
Chow et al, “Mide-wave infrared diode lasers based on GainSB/InAs and InAs/AlSb superlattices”, Appl. Phys. Letter, pp. 3700-3702 (1995).
Hansberger et al., “Demonstration of 3.5 um Ga1-xlnxSb/InAs superlattice diode laser”, Electronics Letters, pp. 275-276 (1995).

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