Two-zone electrical furnace for molecular beam epitaxial apparat

Details Two-zone electrical furnace for molecular beam epitaxial apparat Two-zone electrical furnace for molecular beam epitaxial apparat

1990-06-01

1991-08-20

Reynolds, Bruce A.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

118725, 118726, C23C 1600, F27B 506, F27D 1100

Patent

active

050417193

ABSTRACT:
The invention relates to molecular beam epitaxial (MBE) processing and more particularly to a two zone electrical furnace for use with high vapor pressure II-VI materials. The furnace is designed for use with effusion type crucibles requiring a lower temperature in the fill zone to control the flux and a higher temperature in the orifice zone to avoid clogging the customary collimating orifice. Each zone is heated by a distributively heated radiator, the fill zone radiator being of a tantalum foil construction of low thermal conductance, while the orifice zone radiator is a solid molybdenum cylinder of relatively high thermal conductance. The zones are joined by linking the two radiators by a thermally conductive path, while the shields and the distributed heaters of the respective zones are separated to reduce thermal coupling. The arrangement provides substantial independence between the temperature settings of the two zones and the molybdenum construction is free of erosion from tellurium based reagents.

REFERENCES:
patent: 4518864 (1985-05-01), Freeouf et al.
patent: 4646680 (1987-03-01), Maki
patent: 4878989 (1989-11-01), Purdes
In Situ Growth Surface Termperature Measurement for MBE Growth of CdTe, ZnTe and Cd1-xZnxTe Alloys/D. Rajavel, F. Mueller, B. K. Wagner, R. G. Benz II and C. J. Summers/J. Vac. Science Tech. A 8(2), Mar./Apr. 1990, pp. 1002-1005.
Dimer Arsenic Source Using a High Efficiency Catalytic Cracking Oven for Molecular Beam Epitaxy/J. C. Garcia, A. Barski, J. P. Contour and J. Massies/Appl. Phys. Lett. 51(8), 24/8/87/ pp. 593-595.
Material Effects on the Cracking Efficiency of MBE Arsenic Cracking Furnace/R. L. Lee, W. J. Schaffer, Y. G. Chai, D. Liu, J. S. Harris/Jour. Vac. Science, Tech. B4(2)/Mar./Apr. 1986/ pp. 568-570.
Growth of HgCdTe and other Hg-Based Films and Multilayers by MBE K. A. Harris, S. Hwang; D. K. Blanks; J. W. Cook, Jr.; J. F. Schetzina and N. Otsuka-Jour. Sci. Tech. A4(4)/Jul./Aug. 1986, pp. 2061-2066.
Properties of CdTe Films Grown by MBE/T. H. Myers II/Department of Physics Thesis 1983/11 pages.
Riber Offers the Widest Range of M.B.E. Evaporation Cells/P. Branche and J. C. Garcia/Riber Brochure/5 pages.

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