Two-wavelength semiconductor laser device and method of...

Details Two-wavelength semiconductor laser device and method of... Two-wavelength semiconductor laser device and method of...

2006-07-04

2006-07-04

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C372S023000, C372S046012, C372S050121, C372S050120, C372S046010

Reexamination Certificate

active

07071497

ABSTRACT:
A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second region and has the same layers as those of the first semiconductor laser diode. A second semiconductor laser diode is formed on the non-active layer. A lateral conductive region is formed at least between the first and second semiconductor laser diodes.

REFERENCES:
patent: 6480456 (2002-11-01), Kawamura et al.
patent: 6546035 (2003-04-01), Imafuji et al.
patent: 2004-5269 (2004-01-01), None
patent: 443017 (2001-06-01), None

Affiliated with

Also associated with

Rating

Two-wavelength semiconductor laser device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two-wavelength semiconductor laser device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-wavelength semiconductor laser device and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3566967