Two-wavelength semiconductor laser device and method of...

Details Two-wavelength semiconductor laser device and method of... Two-wavelength semiconductor laser device and method of...

2008-05-20

2008-05-20

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S028000, C438S035000, C438S039000, C438S042000, C438S046000, C372S023000, C372S029013, C372S046010, C372S046011, C372S050100, C372S050121, C372S068000, C257SE33031, C257SE33032, C257SE33033, C257SE33034, C257SE33027

Reexamination Certificate

active

07374959

ABSTRACT:
A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second region and has the same layers as those of the first semiconductor laser diode. A second semiconductor laser diode is formed on the non-active layer. A lateral conductive region is formed at least between the first and second semiconductor laser diodes.

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Chinese Patent Office, Office Action mailed Oct. 13, 2006and English Translation.

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