Two transistor full wave rectifier

Details Two transistor full wave rectifier Two transistor full wave rectifier

1986-08-11

1989-10-17

Salce, Patrick R.

Electric power conversion systems

Current conversion

Using semiconductor-type converter

357 42, H02M 7217

Patent

active

048751510

ABSTRACT:
An integrated circuit two transistor full wave rectifier suitable for fabrication in a CMOS, NMOS or PMOS process and characterized by a high level of integration based upon shared utilization of doped regions. In one form, the full wave rectifier is configured from two diode connected field effect transistors and two parasitic p-n junctions, all formed in a substrate region of common impurity type.

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patent: 4476476 (1984-10-01), Yu et al.
patent: 4559548 (1985-12-01), Iizuka et al.
patent: 4777580 (1988-10-01), Bingham
Maleis, US Statutory Invention Registration (H64), 5/6/86.

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