Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-05-24
2011-05-24
Such, Matthew W (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000, C257S530000, C257SE23147, C257SE23149, C365S129000, C365S148000, C365S151000, C977S943000
Reexamination Certificate
active
07948054
ABSTRACT:
A two terminal memory device includes first and second conductive terminals and a nanotube article. The article has at least one nanotube, and overlaps at least a portion of each of the first and second terminals. The device also includes stimulus circuitry in electrical communication with at least one of the first and second terminals. The circuit is capable of applying first and second electrical stimuli to at least one of the first and second terminal(s) to change the relative resistance of the device between the first and second terminals between a relatively high resistance and a relatively low resistance. The relatively high resistance between the first and second terminals corresponds to a first state of the device, and the relatively low resistance between the first and second terminals corresponds to a second state of the device.
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Bertin Claude L.
Guo Frank
Huang X. M. Henry
Konsek Steven L.
Meinhold Mitchell
Nantero Inc.
Such Matthew W
Wilmer Cutler Pickering Hale and Dorr LLP
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