Two terminal multi-band infrared radiation detector

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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250330, 250332, 25037001, 25037012, 357 30, 357 32, G01J 100, G01T 124, H01L 2500, H01L 3100

Patent

active

051130769

ABSTRACT:
A radiation detector 10 includes a first heterojunction 14A and a second heterojunction 16A electrically coupled together in series between a first electrical contact 18 and a second electrical contact 20. The detector comprises at least a three regions or layers including a first layer 12 having a first type of electrical conductivity, a second layer 14 having a second type of electrical conductivity, and a third layer 16 having the first type of electrical conductivity. The first and second heterojunctions are coupled in series and function electrically as two back-to-back diodes. During use the detector is coupled to a switchable bias source 22 that includes a source of positive bias (+Vb) 22A and a source of negative bias (-Vb) 22B. With +Vb applied across the detector the first heterojunction is in far forward bias and functions as a low resistance conductor, thereby contributing no significant amount of photocurrent to the circuit. The second heterojunction is in a reverse bias condition and modulates the circuit current in proportion to the photon flux of an associated spectral region or color. Conversely, with -Vb applied across the detector the second heterojunction is in forward bias and contributes no significant photocurrent to the circuit while the first heterojunction is reversed biased and produces a current modulation proportional to the flux incident thereon, the flux being associated with a different spectral region.

REFERENCES:
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patent: 4847489 (1989-07-01), Dietrich
patent: 4885619 (1989-12-01), Kosai
J. M. Pawlikowski and P. Becla, "Some Properties of Photovoltaic Cd.sub.x Hg.sub.1-x Te Detectors for Infrared Radiation," Infrared Physics, vol. 15 (1975), pp. 331-337.

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