Two step plasma etching

Details Two step plasma etching Two step plasma etching

1981-12-24

1984-07-03

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156626, 156643, 156646, 156651, 156657, C23C 1500

Patent

active

044578202

ABSTRACT:
A method of etching a variable thickness material on a substrate through an opening or openings is disclosed. The method includes a first etch step in which the material is isotropically etched until the substrate material is first exposed defining a first end point. Thereafter, a second anisotropic etch is performed until all of the remaining material at the opening or openings is removed.
Preferably the etching is by dry plasma etching and the first end point is detected by monitoring the change in concentration of a reactive species. The change is sharply defined by taking a second derivative of the curve of the change in intensity of the peak of the sensed species.

REFERENCES:
patent: 4066491 (1978-01-01), Ruh et al.
patent: 4182646 (1980-01-01), Zajac
patent: 4289188 (1981-09-01), Mizutani
patent: 4289574 (1981-09-01), Radigan
patent: 4380488 (1981-04-01), Reichelderfer et al.
IBM Technical Disclosure Bulletin, vol. 21, No. 6, Nov. 1978, pp. 2327-2328.
IBM Technical Disclosure Bulletin, vol. 20, No. 3, Aug. 1977, p. 991.
A. C. Adams et al., Edge Profiles . . . , J. Electrochem. Soc., Feb. 1981, vol. 128, No. 2, pp. 366-370.
Electrochemical Society, Fall Meeting, Oct. 9-14, 1977, "The Control of Plasma Etched Edge Profiles," E. C. D. Darwall, Ext. Abstract, vol. 77-2, pp. 400-401.
Solid State Technology, Sep. 1976, "The Versatile Technique of RF Plasma Etching, Part I-The Etch Profile," A. Jacob, pp. 70-73.
IBM Technical Disclosure Bulletin, vol. 20, No. 5, Oct. 1977, "Isotropic and Anisotropic Etching in a Diode System," H. M. Gartner et al., pp. 1744-1745.
IBM Technical Disclosure Bulletin, vol. 21, No. 10, Mar. 1979, "Two-Step Dry Process for Delineating Micro and Submicron Dimension Polysilicon Gates," L. M. Ephrath, p. 4236.
IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec. 1979, "Via Profiling by Plasma Etching with Varying Ion Energy," W. W. Koste et al., pp. 2737-2738.

Affiliated with

Also associated with

Rating

Two step plasma etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two step plasma etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two step plasma etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1629647