Two step optical planarizing layer etch

Details Two step optical planarizing layer etch Two step optical planarizing layer etch

2008-03-31

2009-10-13

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

C438S626000, C438S638000, C438S688000, C438S700000, C438S706000, C438S736000, C257SE21252, C257SE21256

Reexamination Certificate

active

07601641

ABSTRACT:
Methods are provided for etching during fabrication of a semiconductor device. The method includes initially etching to partially remove a portion of one or more lithographic-aiding layers overlying an oxide layer while etching a first portion of the oxide layer in accordance with a mask formed by the one or more lithographic-aiding layers, and thereafter additionally etching to remove remaining portions of the one or more lithographic-aiding layers while etching a remaining portion of the oxide layer.

REFERENCES:
patent: 2003/0181054 (2003-09-01), Lee et al.

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