Two-step method of manufacturing compressed bismuth-containing g

Details Two-step method of manufacturing compressed bismuth-containing g Two-step method of manufacturing compressed bismuth-containing g

1985-06-27

1986-12-02

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148175, 252 6257, 350376, 427 38, H01L 21265, G11C 1908, C04B 3540

Patent

active

046253904

ABSTRACT:
The invention relates to a two step method of manufacturing a magnetically switchable magneto-optic element comprising compressed bismuth-containing garnet film of low anisotropy field value deposited on a monocrystalline gadolinium garnet substrate. The first step involves growing a compressed bismuth-containing garnet film having a growth and strain induced effective anisotropy field of about 3000 gauss or less on a monocrystalline gadolinium garnet substrate. The second step involves reducing the anisotropy field of the resulting garnet film to a predetermined lower anisotropy field by ion implantation.

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Torok et al., IEEE-Trans. Magnetics, Mag. 14, (1978) p. 31.
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