Two-step magnetic tunnel junction stack deposition

Details Two-step magnetic tunnel junction stack deposition Two-step magnetic tunnel junction stack deposition

2005-04-26

2005-04-26

Chaudhari, Chandra (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S381000, C438S951000

Reexamination Certificate

active

06884630

ABSTRACT:
Magnetic tunnel junction devices can be fabricated using a two-step deposition process wherein respective portions of the magnetic tunnel junction stack are defined independently of one another.

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Kumagai, S, et al., “Spin Tunneling Magnetoresistance in NiFe/Al2O3.Co Junctions With Reduced Dimensions Formed Using Photolithography,” Journal of Magnetic and Magnetic Materials, 1997, pp. 71-74, vol. 166, No. 1-2, Elsevier Science Publishers, Amsterdam, NL.

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