Two-step GC etch for GC profile and process window improvement

Details Two-step GC etch for GC profile and process window improvement Two-step GC etch for GC profile and process window improvement

2006-05-23

2006-05-23

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000, C438S754000, C438S755000

Reexamination Certificate

active

07049245

ABSTRACT:
A method for manufacturing a semiconductor device that comprises defining a semiconductor substrate, forming a gate oxide on the semiconductor substrate, forming a polycrystalline silicon layer over the gate oxide, forming a tungsten silicide layer over the polycrystalline silicon layer; providing a mask over the tungsten silicide layer, defining the mask to expose at least one portion of the tungsten silicide layer, etching the exposed tungsten silicide layer with a first etchant, wherein some tungsten silicide layer remains, etching the remaining tungsten silicide layer with a second etchant to expose at least one portion of the polycrystalline silicon layer, annealing the tungsten silicide layer, etching the exposed polycrystalline silicon layer, and oxidizing sidewalls of the tungsten silicide layer and the polycrystalline silicon layer.

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