Two-step chemical mechanical polishing process

Details Two-step chemical mechanical polishing process Two-step chemical mechanical polishing process

2006-05-18

2009-06-09

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21244, C257SE21304, C438S691000, C438S692000

Reexamination Certificate

active

07544618

ABSTRACT:
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the first polished surface with a rinse composition to provide a rinsed surface; and polishing the rinsed surface by providing a second polishing composition to provide a second polished surface.

REFERENCES:
patent: 6429134 (2002-08-01), Kubota et al.
patent: 7241725 (2007-07-01), Bian
patent: 2002/0006768 (2002-01-01), Wada et al.
patent: 2003/0036339 (2003-02-01), Bonner et al.
patent: 2005/0148184 (2005-07-01), Hsu et al.
patent: 2006/0148205 (2006-07-01), Akiba et al.
patent: 2006/0228991 (2006-10-01), Kitajima et al.

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