Two stage heteroepitaxial deposition process for GaAsP/Si LED's

Details Two stage heteroepitaxial deposition process for GaAsP/Si LED's Two stage heteroepitaxial deposition process for GaAsP/Si LED's

1974-12-17

1976-06-15

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156610, 156612, 156613, 156614, 357 16, 357 17, 357 60, 357 88, H01L 21205, H01L 3300

Patent

active

039635392

ABSTRACT:
A process for producing light emitting diodes is disclosed. In the process a primer layer of GaP is pyrolytically deposited on a Si substrate with the resulting epitaxial film thickness being sufficient to form complete coalescence of the epitaxial nuclei, but thin enough to avoid cracks in the epitaxial layer due to stress induced by thermal expansion. The thickness is generally between 1-2.mu. . A second layer of GaP is then deposited using the standard halide transport process with thicknesses of 10-20.mu. with the graded addition of AsH.sub.3, until the particularly desired design composition of GaAsP is obtained. A constant layer of GaAsP is grown on the graded layer.

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patent: 3783009 (1974-01-01), Tramposch
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patent: 3862859 (1975-01-01), Ettenberg et al.
broadie et al., "Selective Planar GaP/Si . . . Diodes" I.B.M. Tech. Discl. Bull., vol. 16, No. 4, Sept. 1973, p. 1301.
Berkenblit et al., "Reduction of Stress . . . Hetero-Epitaxial Layers" IBID., vol. 12, No. 9, Feb. 1970, p. 1489.
Blum et al., "Vapor Growth of GaP onto Si Substrates" IBID., vol. 13, No. 5, Oct. 1970, p. 1245.
Ladany et al., "Two-Stage Epitaxial . . . GaAs . . . on Spinel" J. Applied Physics, vol. 43, No. 1, Jan. 1972. p. 236-238.

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