Drying and gas or vapor contact with solids – Process – Gas or vapor contact with treated material
Patent
1997-12-19
1999-02-02
Bennett, Henry A.
Drying and gas or vapor contact with solids
Process
Gas or vapor contact with treated material
34 78, F26B 304
Patent
active
058649662
ABSTRACT:
A method for removing moisture and contaminants, at the monolayer level, from the surface of planar and non-planar objects such as semiconductor wafers or corrugated epitaxial layers. The apparatus comprises of two process chambers. Each chamber contains a selected solvent. The interior of each chamber is saturated with the vapors from their respective solvents. The first solvent of the first process chamber has a boiling point much lower than the boiling points of the second solvent in the second process chamber and a rinsing solvent. Vapors from the first solvent displace the rinsing solvent. Vapors from the second solvent displace the first solvent and any other contaminants; the second solvent is then removed resulting in a dry, contaminant free surface.
REFERENCES:
patent: 4841645 (1989-06-01), Bettcher et al.
patent: 5369891 (1994-12-01), Kamikawa
patent: 5657553 (1997-08-01), Tarui et al.
Bennett Henry A.
California Institute of Technology
Drake Malik N.
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