Two-port dual-gate HEMT for discrete device application

Details Two-port dual-gate HEMT for discrete device application Two-port dual-gate HEMT for discrete device application

2006-06-05

2008-09-02

Choe, Henry K (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including field effect transistor

C330S296000

Reexamination Certificate

active

07420417

ABSTRACT:
A two-port dual-gate field-effect transistor for amplifier applications, wherein a self-bias circuit includes a number of passive elements, such as resistors, diodes and capacitors, is utilized to coupled the output of the amplifier with a second gate of the dual-gate device as a bias source, which transforms the conventional three-port cascade topology into a two-port dual-gate device so as to facilitate device testing, modeling, and packaging for discrete device application. The technology improves the RF performance in conventional two-port single-gate HEMT devices, with slight noise figure degradation.

REFERENCES:
patent: 4264981 (1981-04-01), Vilimek
patent: 4849710 (1989-07-01), Vo
patent: 6515547 (2003-02-01), Sowlati
patent: 7187238 (2007-03-01), Thalhammer

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