Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1983-08-31
1985-09-03
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
333 34, H03F 360, H03C 738
Patent
active
045395284
ABSTRACT:
A two-port monolithic microwave amplifier, which uses a distributed negative resistance diode with gain (such as an IMPATT diode) as an active element. The diode is tapered (increasing in width but not in thickness) so that, as the RF signal propagates along the diode, it sees a wider and wider active diode region. This diode is operated in the power-saturated region, so that, as the RF signal propagates along the diode, terminal voltage remains essentially constant, but the RF current increases. This configuration is inherently undirectional.
REFERENCES:
patent: 4063186 (1977-12-01), Rubin
Bayraktaroglu Burhan
Frensley William
Kim Bum-man
Comfort James T.
Groover Robert
Mullins James B.
Sharp Melvin
Texas Instruments Incorporated
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