Two-phase programming of a flash memory

Details Two-phase programming of a flash memory Two-phase programming of a flash memory

2007-02-13

2007-02-13

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290

Reexamination Certificate

active

10902866

ABSTRACT:
A datum is stored in a memory by placing a memory cell in a first state that is indicative of the datum, and later placing the same or a different cell in a second state that is indicative of the same datum. If a different cell is placed in the second state, both cells are programmed to store the same number of bits, and then preferably the first cell is erased. Preferably, the first cell is placed in the first state by the application thereto of a first train of voltage pulses until the cell's threshold voltage exceeds a first reference voltage, and the first or second cell is placed in the second state by the application thereto of a second train of voltage pulses until the cell's threshold voltage exceeds a second reference voltage.

REFERENCES:
patent: 5404485 (1995-04-01), Ban
patent: 5754475 (1998-05-01), Bill et al.
patent: 5930167 (1999-07-01), Lee et al.
patent: 6069821 (2000-05-01), Jun et al.
patent: 6246608 (2001-06-01), Odani
patent: 2002/0141237 (2002-10-01), Goda et al.
patent: 2004/0114434 (2004-06-01), Ishii et al.

Affiliated with

Also associated with

Rating

Two-phase programming of a flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two-phase programming of a flash memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-phase programming of a flash memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3838868