Two-phase continuous poly silicon gate CCD

Details Two-phase continuous poly silicon gate CCD Two-phase continuous poly silicon gate CCD

1976-12-15

1979-05-22

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 59, 357 91, 307221D, 29589, H01L 2978, H01L 2904, G11C 1928, B01J 1700

Patent

active

041562470

ABSTRACT:
This invention provides the structure for a two-phase charge coupled storage device. Alternate regions of thicker and thinner silicon dioxide are grown upon a silicon substrate. These silicon dioxide regions are covered with a layer of deposited, undoped polysilicon. A layer of silicon dioxide is grown over the polysilicon. Ion implantation is applied to cause isolated regions of conductivity in the polysilicon. Then contact windows are cut in the upper most layer of silicon dioxide exposing the polysilicon therethrough and a metal coating is deposited in the contact windows. Two-phase signals are applied to the resulting electrodes to advance charges at the surface of the silicon substrate.

REFERENCES:
patent: 3728590 (1973-04-01), Kim et al.
patent: 3836409 (1974-09-01), Amelio et al.
patent: 3853634 (1974-12-01), Amelio et al.
patent: 3863065 (1975-01-01), Kosonocky et al.
patent: 3865652 (1975-02-01), Agusta et al.
patent: 3967365 (1976-07-01), Friedrich
patent: 4001861 (1977-01-01), Carnes

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