Two-phase clock type charge coupled device having electrodes wit

Details Two-phase clock type charge coupled device having electrodes wit Two-phase clock type charge coupled device having electrodes wit

1997-04-21

1998-12-15

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 75, 438144, 438302, 438525, H01L 2100, H01L 21339, H01L 21336, H01L 21425

Patent

active

058496050

ABSTRACT:
In a charge coupled device (CCD) comprising a semiconductor substrate having a channel layer therein and a gate insulator thereon, a plurality first electrodes arranged in charge transfer direction on the gate insulator with inter-electrode spaces defined by opposite sidewalls of the first electrodes, an interlayer insulators covering the outer surfaces including the sidewalls of the first electrodes, a plurality of second electrodes formed at the inter-electrodes spaces, and a potential barrier region formed in the channel layer under the inter-electrode spaces, each of the sidewalls are tapered to diverge the inter-electrode space upwardly from the gate insulator so that each of the first electrodes has a thin portion at the tapered sidewall. In boron injection to form the potential barrier region using the first electrodes as a mask. boron is injected through the inter-electrode space and also penetrates the thin portion of the sidewall, so that the potential barrier region is extended into the portion under the tapered sidewall. The potential barrier region is further expanded by obliquely injecting boron forwardly and reversely in the charge transfer direction, to thereby provide a high speed CCD with a low drive voltage with generation of no potential pocket. It is further enhanced by use of an energy at the forward injection higher than at the other injection reversely in the charge transfer direction.

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