Two-phase charge coupled device structure

Details Two-phase charge coupled device structure Two-phase charge coupled device structure

1976-07-02

1978-05-02

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 59, 357 91, 307221D, 148 15, H01L 2978, H01L 2904, G11C 1928

Patent

active

040878325

ABSTRACT:
A semiconductor integrated charge coupled device is disclosed having an optimized minimum bit length for two-phase operation. Minimum spacing between created depletion regions and electrodes is obtained by having different ion implanted doping levels in the structure in correlation to overlying phase electrodes.
Also disclosed is means for segmenting a charge coupled device channel with provision for sensing of data in each channel segment to increase the speed of transfer of information from the device.
Also disclosed is a novel correlation of transfer or control electrodes of a CCD device with a source of phase clock pulses to provide directionality in a single CCD channel.

REFERENCES:
patent: 3796932 (1974-03-01), Amelio et al.
patent: 3801883 (1974-04-01), Tiemann
patent: 3858232 (1974-12-01), Boyle et al.
patent: 3918997 (1975-11-01), Mohsen et al.
patent: 3927468 (1975-12-01), Anthony et al.
patent: 3932775 (1976-01-01), Kosonooky
Sequin "Two-Dimensional Charge-Transfer Arrays," IEEE J. Solid-State Circuits, vol. Sc.-9, (6/74), pp. 134-142.
Distefano, "Surface Charge Guides Using Heavily Doped Regions," IBM Technical Disclosure Bulletin, vol. 15, (7/72), pp. 435-436.

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