Two parallel plate electrode type dry etching apparatus

Details Two parallel plate electrode type dry etching apparatus Two parallel plate electrode type dry etching apparatus

1993-10-07

1995-05-16

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

20429837, 20429838, H05H 100

Patent

active

054157196

ABSTRACT:
In a plasma generating chamber, two parallel plate type electrodes are provided, and a dielectric line member is mounted on one of the electrodes. The dielectric line member is connected to a microwave oscillator, to generate gas plasma uniformly in the plasma generating chamber. A high frequency bias power supply source is connected to the other electrode.

REFERENCES:
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 5034086 (1991-07-01), Sato
patent: 5162633 (1992-11-01), Sonobe et al.
patent: 5173641 (1992-12-01), Imahashi et al.
patent: 5203960 (1993-04-01), Dandl
By K. Komachi et al., "Resist Ashing at Room Temperature using Surface Wave Plasma", Oct. 1990, Abstract No. 463, pp. 674-675, Princeton, N.J.

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