Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Reexamination Certificate
2005-08-30
2005-08-30
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
C257S471000, C257S475000, C257S483000
Reexamination Certificate
active
06936905
ABSTRACT:
A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device including a LOCOS structure and two p-type doping regions, which are positioned one above another therein to isolate cells so as to avoid premature of breakdown voltage. The Schottky rectifier device comprises: an n− drift layer formed on an n+ substrate; a cathode metal layer formed on a surface of the n+ substrate opposite the n− drift layer; a pair of field oxide regions and termination region formed into the n− drift layer and each spaced from each other by the mesas, where the mesas have metal silicide layer formed thereon. A top metal layer formed on the field oxide regions and termination region and contact with the silicide layer. Under each of field oxide regions and termination region is a p doped and p− doped region cascade which provide depleted regions enclosed the p− doped regions to blocking the leakage current while a reverse bias voltage is exerted to the Schottky power rectifier diode.
REFERENCES:
patent: 5859465 (1999-01-01), Spring et al.
patent: 6583485 (2003-06-01), Epke
patent: 6657273 (2003-12-01), Skocki
patent: 2003/0218230 (2003-11-01), Takahashi et al.
patent: 56002672 (1981-01-01), None
patent: 60154683 (1985-08-01), None
patent: 03185870 (1991-08-01), None
patent: 04162682 (1992-06-01), None
N.G. Wright et al., Surface Passivation Techniques for GaAs Power Schottky Diodes, 1997, IEEE, International Symposium on Power Semiconductor Devices and ICs, pp. 141-144.
Chip Integration Tech Co., Ltd.
Eckert George
Troxell Law Office PLLC
Wu Shye-Lin
LandOfFree
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