Two mask in-situ overlay checking method

Details Two mask in-situ overlay checking method Two mask in-situ overlay checking method

2007-02-13

2007-02-13

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

C430S030000, C430S312000, C382S151000

Reexamination Certificate

active

10126388

ABSTRACT:
A method for in-situ overlay accuracy checking using a first mask having a first pattern and a second mask having a second pattern to expose a layer of photosensitive material formed on a wafer. The first pattern and the second pattern are exposed in the layer of photosensitive material using the first mask, the second mask, and a photolithographic alignment and exposure system. The layer of photosensitive material is then developed and the relative position between the first pattern and the second pattern is analyzed.

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