Two-level spiral inductor structure having a high inductance to

Details Two-level spiral inductor structure having a high inductance to Two-level spiral inductor structure having a high inductance to

1996-01-31

1997-08-12

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257531, 336185, 336208, 336220, H01L 2900

Patent

active

056568495

ABSTRACT:
A high-Q monolithic inductor structure formed using conventional silicon technology and having a first complete lower inductor spiral formed on a substrate and a second complete upper formed on a insulating layer over the first inductor spiral. Central portions of the inductor spirals are connected through a via hole in the insulating layer. The inductor spirals are oriented such that the current flows in the first and second spirals are in the same direction.

REFERENCES:
patent: 4418470 (1983-12-01), Naster et al.
patent: 4494100 (1985-01-01), Stengel et al.
patent: 4648087 (1987-03-01), Scranton et al.
patent: 5070317 (1991-12-01), Bhagat
patent: 5095357 (1992-03-01), Andoh et al.
patent: 5227659 (1993-07-01), Hubbard
patent: 5279988 (1994-01-01), Saadat et al.

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