Two level charge imaging matrix design with stepped insulator

Details Two level charge imaging matrix design with stepped insulator Two level charge imaging matrix design with stepped insulator

1984-05-17

1987-04-14

Edlow, Martin H.

357 32, 357 30, H01L 2978

Patent

active

046582770

ABSTRACT:
The disclosure relates to a charge imaging matrix wherein the floating gate level closest to the substrate is used as a storage gate and the second floating gate level is used as both a field plate and a transfer gate due to the formation of a step in the insulator thereunder which leaves an N-channel in the transfer region when the remainder of the gate is biased to flat band.

REFERENCES:
patent: 3967306 (1976-06-01), Bower
patent: 4194213 (1980-03-01), Kano et al.
patent: 4327291 (1982-04-01), Chapman et al.
patent: 4429330 (1984-01-01), Chapman
patent: 4447291 (1984-05-01), Schulte

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