Two layer hermetic-like coating for on-wafer encapsulatuon of Ga

Details Two layer hermetic-like coating for on-wafer encapsulatuon of Ga Two layer hermetic-like coating for on-wafer encapsulatuon of Ga

1998-02-06

2000-10-24

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257640, 257778, H01L 2980

Patent

active

061371254

ABSTRACT:
The present invention is drawn to a 2-layer hermetic coating for on wafer encapsulation of GaAs monolithic microwave integrated circuits and the flip-chip mounting thereof. The present invention utilizes the properties of benzocyclobutene (BCB) for use in high frequency microwave applications to capacitively decoupled the MMIC from the carrier substrate during the flip-chip mounting process. The present invention has the advantage of improved performance and reliable flip-chip mounting by the reduction in stress between the carrier substrate and the MMIC that often occurs in flip-chip mounting of the MMIC.

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