Coherent light generators – Particular active media – Semiconductor
Patent
1989-03-17
1990-09-11
Sikes, William L.
Coherent light generators
Particular active media
Semiconductor
372 99, H01S 300
Patent
active
049568442
ABSTRACT:
An improved two-dimensional semiconductor surface-emitting laser array is described in which two intra-cavity internal reflecting surfaces are formed at a 45.degree. angle to the plane of the active layer of the semiconductor laser so as to internally reflect light from each end of the active layer in a direction normal to the plane of the active layer with a buried reflective mirror provided in the path of one of said reflections, so as to transmit reflected light back through the laser and out the top surface of the array.
REFERENCES:
patent: 3996492 (1976-12-01), McGroddy
patent: 3996528 (1976-12-01), Blum et al.
patent: 4047124 (1977-09-01), Comerford et al.
patent: 4663476 (1986-12-01), Scifres et al.
patent: 4718070 (1988-01-01), Liau et al.
patent: 4760578 (1988-07-01), Oshima et al.
"Surface Emitting Laser Diode with Bent Waveguide", Ogura et al., Appl. Phys. Lett. 50(12), Mar. 23, 1987, pp. 705-707.
"Phase-Locked Operation of Coupled Pairs of Grating-Surface-Emitting Diode Lasers", Hammer et al., Appl. Phys. Lett., 50(11), Mar. 16, 1987, pp. 659-661.
"Surface Emitting Laser Diode with Al.sub.x Ga.sub.1 -.sub.x As/GaAs Multilayered Heterostructure", Ogura et al., J. Vac. Sci. Technol. B3(2), Mar./Apr. 1985, pp. 784-787.
"Monolithic Two-Dimensional Surface-Emitting Arrays of GaAs/AlGaAs Diode Lasers", Donnelly et al., Appl. Phys. Lett., 52(15), Oct. 12, 1987, pp. 1138-1140.
"Angular Chlorine Ion-Beam-Assisted Etching of GaAs and AlGaAs", Goodhue et al., 1986 Inst. Phys. Conf., Ser. No. 83: Ch. 7, pp. 349-354.
"Recent Progress in Surface-Emitting Lasers", Iga et al., Technical Digest Series, Topical Meeting on Semiconductor Lasers, vol. 6, Feb. 10-11, 1987, pp. 99-105.
"Lasing Characteristics of Improved GaInAsP/InP Surface Emitting Injection Lasers", Iga et al., Electronics Letters, Jun. 23, 1983, vol. 19, No. 13, pp. 457-458.
"Room-Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Injection Lawer", Iga et al., Appl. Phys. Lett., 45(4), Aug. 15, 1984, pp. 348-350.
"Novel Double-Heterostructure Lasers", SpringThorpe et al., International Electron Devices Meeting, 1977, pp. 571-574.
Goodhue William D.
Rauschenbach Kurt
Wang Christine A.
Massachusetts Institute of Technology
Sikes William L.
Wise Robert E.
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