Two-dimensional semiconductor image sensor with regulated integr

Details Two-dimensional semiconductor image sensor with regulated integr Two-dimensional semiconductor image sensor with regulated integr

1982-08-19

1986-05-13

Rubinson, Gene Z.

Facsimile and static presentation processing

Facsimile

Recording apparatus

357 24, H04N 312

Patent

active

045890242

ABSTRACT:
A two-dimensional image sensor integrated on a semiconductor substrate has a plurality of sensor elements disposed in rows and columns. The sensors in each row and column are individually selected in succession via parallel outputs of a first vertical shift register for readout of the sensor elements. Regulation of the integration time during which charge carriers collect in the sensor elements due to incident light is achieved by selecting the sensor elements in each row a further n times via a second vertical shift register after each readout of the charges optically generated therein and within the time span during which the charges collected in the sensor elements of the next n rows are respectively transferred for readout into the column lines. The further n selections eliminate charges formed in the interim in the column lines so that the integration time of all sensor elements is variably shortened by the duration of readout of the n rows.

REFERENCES:
patent: 4189749 (1980-02-01), Hiroshima et al.
patent: 4233632 (1980-11-01), Akiyama
patent: 4380755 (1983-04-01), Endlicher et al.
"Low-Noise MOS Area Sensor with Antiblooming Photodiodes", S. Ohba et al., IEEE Journal of Solid-State Circuits, vol. SC-15, No. 4, Aug. 1980, pp. 747-752.
"Charge-Injection Imaging: Operating Techniques and Performances (sic) Characteristics," H. Burke et al., IEEE Journal of Solid-State Circuits, vol. SC-11, Feb. 1976, pp. 121-128.

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