Two-dimensional semiconductor image sensor and method of operati

Details Two-dimensional semiconductor image sensor and method of operati Two-dimensional semiconductor image sensor and method of operati

1983-07-08

1985-10-15

Rubinson, Gene Z.

Facsimile and static presentation processing

Facsimile

Recording apparatus

258213, H04N 530

Patent

active

045478066

ABSTRACT:
A two-dimensional semiconductor image sensor has row lines which are selectable by way of a vertical shift register to drive first selection transistors of row and column oriented sensor elements. Column lines are connected to a read-out line by way of switches which are sequentially driven by outputs of a horizontal shift register. The goal is to increase the signal-to-noise ratio and is achieved by the provision of second selection transistors for the sensor elements which are connected in series with the first selection transistors, by way of row selection transistors which connect the row lines to the outputs of the vertical shift register, and by way of a difference-forming stage which is connected to the read-out line.

REFERENCES:
patent: 4380755 (1983-01-01), Endlicher et al.
"Solid-State Image Sensor Array Ra100.times.100", Reticon Corporation, Mountain View, CA, Sep. 28, 1978.
J. A. Hall, "Amplifier and Amplifier Noise Considerations", Edited by P. G. Jespers, et al., NATO Advanced Study Institute, Series E: Applied Sciences No. 16, pp. 535-559.
M. H. White, et al., "Characterization of Surface Channel CCD Image Arrays at Low Light Levels", IEEE Journal of Solid-State Circuits, vol. Sc. 9, No. 1, Feb. 1974, pp. 1-13.

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