Two-dimensional photonic crystal cavity and channel add/drop...

Optical waveguides – Planar optical waveguide

Reexamination Certificate

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C385S130000, C385S131000, C385S132000

Reexamination Certificate

active

07120344

ABSTRACT:
The Q factor and electric field pattern (radiation pattern) for a cavity made from a donor-type point defect4as is illustrated in FIG.1were simulated by the FDTD method. The simulation parameters were configured by selecting silicon for the slab1; and setting approximately 1.55 μm, which is generally used in optical communications, for the wavelength λ; 0.42 μm for the lattice constant a; 0.6a for the slab1thickness; and 0.29a for the predetermined sectional radius of the through-holes2.

REFERENCES:
patent: 2002/0009277 (2002-01-01), Noda et al.
patent: 2002/0191905 (2002-12-01), Prather et al.
patent: 2001-272555 (2001-10-01), None
patent: 2003-279764 (2003-10-01), None
patent: PCT/JP03/03762 (2003-10-01), None
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