Two-dimensional phase-locked surface emitting semiconductor lase

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 48, 372108, 357 17, H01S 319

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active

047962690

ABSTRACT:
A coherent, two-dimensional, phase-locked, surface emitting semiconductor laser array in a monolithic wafer is disclosed. Active regions of diode laser-striped semiconductor material are focused ion beam (FIB) micromachined to form transversely disposed channels of symmetric, opposed, generally parabolic, mirrored surfaces. Multiple diode laser pairs, emitting laser energy in a generally horizontal plane, are longitudinally injection-coupled (phase-locked) by semitransmissive, opposed regions that are micromachined into the otherwise reflective parabolic surfaces of each channel. Inherently, the striped material permits evanescent coupling, in an axis generally perpendicular to the longitudinal, injection-coupled axis. Thus, coupling is achieved in two dimensions across the extent of the array. High-power, coherent, laser energy is reflected thereby generally normally away from the surface of the monolithic structure. In a modification to the preferred embodiment, discrete electrodes on the top surface of the active region segments enable laser beam modulation or wavelength tuning of the coherent, surface emitting laser energy.

REFERENCES:
patent: 4581744 (1986-04-01), Takamiya et al.
(Anonymous), "RCA Laboratories Develops Surface-Emitting Diode Laser," Lasers & Applications, vol. 5, No. 11, Nov. 1986, pp. 18, 20.
Chow, "Two-Dimensional Phase-Locked Laser Array," National Technical Information Service (U.S. Dept. of Comm.), publication date unknown.
Evans et al., "Surface-Emitting Second Order Distributed Bragg Reflector Laser with Dynamic Wavelength Stabilization and Far-Field Angle of 0.25.degree.," Applied Physics Letters, vol. 49, No. 6, Aug. 11, 1986, pp. 314-315.
Yang et al., "Surface-Emitting GaAlAs/GaAs Linear Laser Arrays with Etched Mirrors," Applied Physics Letters, vol. 49, No. 18, Nov. 3, 1986, pp. 1138-1139.

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