Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2004-07-27
2009-02-24
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492210, C250S492220, C250S492300, C250S492100
Reexamination Certificate
active
07495238
ABSTRACT:
A novel two-dimensional patterning method enabling two-dimension patterning without using any photosensitive material and ion milling, wherein a two-dimensional pattern is formed by destroying a blister provided on a substrate by electron or ion irradiation.
REFERENCES:
patent: 4843238 (1989-06-01), Nishioka et al.
patent: 5660957 (1997-08-01), Chou et al.
patent: 6197697 (2001-03-01), Simpson et al.
patent: 6225193 (2001-05-01), Simpson et al.
patent: 6407399 (2002-06-01), Livesay
patent: 7038290 (2006-05-01), Li
Igarashi Shinichi
Kitajima Masahiro
Nakamura Akiko
Berman Jack I
Japan Science and Technology Agency
National Institute for Materials Science
Smyth Andrew
Wenderoth , Lind & Ponack, L.L.P.
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