Two-dimensional electron gas field effect transistor including a

Details Two-dimensional electron gas field effect transistor including a Two-dimensional electron gas field effect transistor including a

1992-12-07

1994-12-13

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257192, 257194, 257 20, 257191, H01L 2980, H01L 29161, H01L 29205, H01L 29227

Patent

active

053731689

ABSTRACT:
The invention provides a compound semiconductor multilayer structure having a two-dimensional electron gas, which is applicable to field effect transistors. A ternary compound InGaAs planar channel layer serving as a quantum well has a variation of an In (indium) fraction in a perpendicular direction to a heterojunction interface. The variation has a step-graded profile with taking a maximum value at or in the vicinity of a portion where the two-dimensional electron gas takes a maximum density. Such quantum well has most large depth at a portion except for adjacent portions to the heterojunction interfaces. Such multilayer structure provides a great electron mobility and a strong electron confinement to major electrons at a high electron density portion. Such multilayer structure provides the large effective electron mobility and the large sheet electron density to the two-dimensional electron gas without a gain of the average of the In (indium) fractions, thereby suppressing the enlargement of the lattice mismatch which causes misfit dislocations in crystals.

REFERENCES:
patent: 4833508 (1989-05-01), Ishikawa et al.
patent: 5091759 (1992-02-01), Shih et al.
IEEE Electron Device Letters, vol. EDL-7, No. 12, pp. 444-446, Dec. 1986.
Physical Review B vol. 30, No. 2, pp. 840-847, Jul. 15, 1984.

Affiliated with

Also associated with

Rating

Two-dimensional electron gas field effect transistor including a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Two-dimensional electron gas field effect transistor including a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two-dimensional electron gas field effect transistor including a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1194898