1980-04-14
1982-02-16
Edlow, Martin H.
357 15, 357 16, H01L 2714
Patent
active
043162061
ABSTRACT:
A narrow two color semiconductor detector created from the built in field tween epitaxial layers due to interface traps. Opposite polarity on opposite sides of the interface result in a net photocurrent created on each side which flows in opposing directions. The substrate supporting the epitaxial layers provides a cutoff filter range for light entering through the substrate.
REFERENCES:
patent: 3757123 (1973-09-01), Archer
patent: 3980915 (1976-09-01), Chapman
patent: 4110778 (1978-08-01), Eden
patent: 4119994 (1978-10-01), Jain
patent: 4213138 (1980-07-01), Campbell
patent: 4218143 (1980-08-01), Bottka
Bottka et al., Appl. Phys. Lett., 33(8), 15 Oct. 1978, pp. 765-767.
Bottka Nicholas
Hills Marian E.
Beers Robert F.
Edlow Martin H.
Pritchard Kenneth G.
Skeer W. Thom
The United States of America as represented by the Secretary of
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