Two-color infrared detector and fabrication method thereof

Details Two-color infrared detector and fabrication method thereof Two-color infrared detector and fabrication method thereof

1998-05-13

2000-04-11

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257440, 257614, H01L 3100

Patent

active

060491167

ABSTRACT:
A structure and the fabrication method of two-color IR detector are disclosed. Disclosed two-color IR detector structure is a n-p-N structure which can be realized using only two-layer HgCdTe. The most important factor in the two-color IR detector structure is the formation of the potential barrier in the conduction band of p-N heterojunction. This potential barrier prevents photogenerated minority carriers in p-HgCdTe region from diffusing to and being collected by N-HgCdTe region (larger band gap diode). The calculated potential barrier heights under the thermal equilibrium at 77 K are 21 kT (141 meV) and 13.4 kT (89 meV) for the cases of p-Hg.sub.0.78 Cd.sub.0.22 Te/N-Hg.sub.0.69 Cd.sub.0.3l Te and p-Hg.sub.0.69 Cd.sub.0.31 Te/N-Hg.sub.0.636 Cd.sub.0.364 Te with each side carrier concentration of 5.times.10.sup.15 and 1.times.10.sub.16 cm.sup.-3, respectively. It is confirmed that spectral response wavelength range of two diodes is well distinguished and two-color detector shows very low spectral crosstalk.

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