Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-09-14
1998-05-12
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257441, 257443, H01L 2714, H01L 3100
Patent
active
057510490
ABSTRACT:
A two-color infrared detector (50) is provided comprising elements (10, 110, or 210) having one or more diodes (58, 158 and 168) and a metal insulator semiconductor ("MIS") device (56 and 156). The infrared detector (50) may be referred to as a vertically integrated capacitor diode. The diodes comprise regions (12, 14, 16, 112, 114, and 116) of semiconductor materials which are operable to generate electron-hole pairs when struck by infrared radiation (40) having first and second wavelengths. The capacitor (156) includes a gate (24) provided by the MIS device which is operable to generate a potential well in the first semiconductor region (12 and 112) in conjunction with an insulator layer (22) and collect charges generated by the first wavelength of infrared radiation (40). The layers of semiconductor material may be varied to enhance the performance of the resulting infrared detector.
REFERENCES:
Blazejenski J Vac Sci Tech B 10(4) Jul./Aug. 1992 pp. 1626-1032.
Goodwin et al J Vac Sci Tech A vol. 18 No. 2 Mar./Apr. 1990 pp. 1226-1232.
Donaldson Richard L.
Kesterson James C.
Maginniss Christopher L.
Monin, Jr. Donald L.
Texas Instruments Incorporated
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