Two carrier dual injector apparatus

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 4, 357 54, 357 235, 365 94, 365102, H01L 4902

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active

044727267

ABSTRACT:
A two carrier dual injector semiconductor apparatus utilizing a pair of injector gates for simultaneously injecting holes and electrons into a series stack of insulator layers. The stacked insulator layers which may be arranged in a MIM or MIS configuration have injecting layers near opposing metal gates for injecting either electrons as holes into the insulator layers depending upon the polarity of the applied bias voltage. The apparatus is capable of high-current low-voltage carrier injection while maintaining a stable trapped spaced charge within the stack of insulator layers.

REFERENCES:
patent: 4104675 (1978-08-01), DiMaria et al.
patent: 4217601 (1980-08-01), DeKeersmaecker et al.
Frohman-Bentchkowsky et al., "Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) Structures", J. Appl. Phys., vol. 40, No. 8, pp. 3307-3319, Jul. 1969.

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