Static information storage and retrieval – Floating gate – Particular biasing
Patent
1999-02-04
2000-01-04
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
365131, 36518529, G11C 1604
Patent
active
060117257
ABSTRACT:
A non-volatile electrically erasable programmable read only memory (EEPROM) capable of storing two bit of information having a nonconducting charge trapping dielectric, such as silicon nitride, sandwiched between two silicon dioxide layers acting as electrical insulators is disclosed. The invention includes a method of programming, reading and erasing the two bit EEPROM device. The nonconducting dielectric layer functions as an electrical charge trapping medium. A conducting gate layer is placed over the upper silicon dioxide layer. A left and a right bit are stored in physically different areas of the charge trapping layer, near left and right regions of the memory cell, respectively.
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Le Thong
MacPherson Alan H.
Nelms David
Saifun Semiconductors Ltd.
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