Turn-on/off driving technique for insulated gate thyristor

Details Turn-on/off driving technique for insulated gate thyristor Turn-on/off driving technique for insulated gate thyristor

1989-06-26

1991-02-19

Zazworsky, John

Electrical transmission or interconnection systems

Plural supply circuits or sources

Load current control

307631, 307637, H03K 1772

Patent

active

049946960

ABSTRACT:
A turn-on/off driving method for an insulated gate thyristor which has a first gate electrode insulatively provided above a first base layer and functioning as the gate of MOSFET, and a second gate electrode formed on the second base layer. To execute the turn-off driving operation, a first voltage is applied to the second gate electrode to produce reverse biasing between the second emitter layer and the second base layer, thereby to quench this thyristor. A second voltge which renders the transistor nonconductive is applied the first gate electrode before the application of the first voltage. The turn-on driving operation of the thyristor may be performed by using the first gate electrode.

REFERENCES:
patent: 4419683 (1983-12-01), Herberg
patent: 4466010 (1984-08-01), Patalong
patent: 4486768 (1984-12-01), Sueoka et al.
patent: 4774420 (1988-09-01), Sutton

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