Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1991-08-08
1994-06-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257149, 257153, 257754, 257757, H01L 2974
Patent
active
053249674
ABSTRACT:
In a turn off type semiconductor device, an n-type emitter layer is divided into a plurality of elements by trenches. A silicide layer of a high melting point metal is provided on a p-type layer adjacent to the individual elements of the n-type emitter layer on a bottom of each of the trenches. A gate electrode is provided on the associated silicide layer so as to surround the plurality of elements of the n-type emitter layer obtained by the division of the emitter layer. An insulator is filled in each of the trenches dividing the n-type emitter layer surrounded by the gate electrode. A cathode electrode is provided on both the insulators and the n-type emitter layer.
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Roggwiller, P., et al. "A Highly Interdigitated GTO Power Switch . . . " IEDM 1984, 439-41.
Honma Hideo
Murakami Susumu
Sanpei Isamu
Satou Yukimasa
Yagishita Kenji
Crane Sara W.
Hitachi , Ltd.
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