Turn-off semiconductor component having amphoteric properties

Details Turn-off semiconductor component having amphoteric properties Turn-off semiconductor component having amphoteric properties

1995-09-14

1997-03-11

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257139, 257148, 257152, 257607, H01L 2974

Patent

active

056104154

ABSTRACT:
In turn-off semiconductor components such as GTO thyristors, the semiconductor body can be locally overheated and destroyed as a consequence of inhomogeneities. The anode-side emitter is therefore doped with additional substances that locally compensate the emitter doping above the operating temperature and locally reduce the current amplification factor of the anode-side transistor structure. An increased turn-off current is thus achieved.

REFERENCES:
patent: 3938173 (1976-02-01), Jackson et al.
patent: 4035205 (1977-07-01), Lebailly et al.
patent: 4356503 (1982-10-01), Shafer et al.
patent: 4450467 (1984-05-01), Nagano et al.
Correlation Betwen Local Segment Characteristics and Dynamic Current Redistribution in GTO Power Thyristors-IEEE Transactions on Electron Devices, vol. 41, No. 5, May 1994.

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