Turn-off semiconductor component and use thereof

Details Turn-off semiconductor component and use thereof Turn-off semiconductor component and use thereof

1989-03-23

1990-12-11

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307305, 307637, 357 22, 357 55, H01L 29740, H03K 17720

Patent

active

049774387

ABSTRACT:
A semiconductor device which can be turned off via a first gate arranged at the cathode side including, a second gate structure comparable to the structure of the first gate arranged at the anode side. During the turning off, the charge carriers can be more rapidly drawn away from the base area of the component via the second anode-side gate and the turn-off behavior can thus be improved. In a dual gate device of the invention, a dual cascode circuit constructed with two MOSFETs.

REFERENCES:
patent: 2820154 (1958-01-01), Kurshaw
patent: 4086611 (1978-04-01), Nishizawa et al.
patent: 4326209 (1982-04-01), Nishizawa et al.
patent: 4514747 (1985-04-01), Miyata et al.
patent: 4571815 (1986-02-01), Baliga et al.
patent: 4612448 (1986-09-01), Strack
patent: 4816891 (1989-03-01), Nishizawa
patent: 4829348 (1989-05-01), Broich et al.
patent: 4837608 (1989-06-01), Nishizawa et al.
patent: 4872044 (1989-10-01), Nishizawa et al.

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