Turn-off power semiconductor device

Details Turn-off power semiconductor device Turn-off power semiconductor device

1992-10-16

1994-09-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257139, 257146, 257162, H01L 2974, H01L 2906

Patent

active

053492137

ABSTRACT:
To avoid peripheral current-density overshoots in a turn-off power semiconductor device, in particular an MOS-controlled thyristor MCT having a multiplicity of separate MCT cells ((M1, . . . , M3), the unit cells (here: MCT cells (M1, . . . , M3)) are combined in groups to form segments (SE) and are surrounded peripherally by peripheral short-circuit regions (10, 15) which are embedded in the semiconductor substrate (1) from the cathode side and are directly connected to the cathode contact (2). At the same time, the peripheral short-circuit regions (10) are of the same conductivity type as the anode-side emitter layer (8).

REFERENCES:
patent: 4958211 (1990-09-01), Temple
MOS-Controlled Thyristors-A New Class Of Power Victor A. K. Temple, Member, IEEE 1986 (Oct.) pp. 227-229, vol. ED-33, No. 10.
A New MOS-Gated Power Thyristor Structure With Turn-Off Achieve By Controlling The Base Resistance, M. Nandakumar et al. pp. 1609-1618, IEEE 1991 (May), vol. 12, No. 5.

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