Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Five or more layer unidirectional structure
Patent
1992-06-26
1994-02-15
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Five or more layer unidirectional structure
257133, 257146, 257336, 257338, 257341, 437 6, 437 20, 437 26, 437 41, 437 56, H01L 2974, H01L 2702, H01L 2910
Patent
active
052869814
ABSTRACT:
A turn-off power semiconductor component subdivided into unit cells (EZ), including between an anode (A) and a cathode (K) in a semiconductor substrate (1) five layers in p-n-p-n-p sequence, namely an anode layer (10) an n-type base layer (9), a p-type base layer (8), a turn-off region (6), a cathode region (7) adjoining the turn-off region, and a p-doped short-circuit region (5). On the cathode side in every unit cell (EZ), a first MOSFET (M1) which can be driven via a first insulated gate electrode (G1) is provided for the purpose of switching between the five-layer structure and a conventional thyristor four-layer structure. A second MOSFET (M2) having a second gate electrode (G2) prevents a breakdown between the p-type short-circuit region (5) and the turn-off region (6) during turn-off. p-Type short-circuit region (5), turn-off region (6) and cathode region (7) are introduced in a self-aligning manner into the semiconductor substrate (1) through the windows (F1, F2) between the gate electrodes (G 1 and G2, respectively). Current filamentation during turn-off is effectively avoided by the switchable five-layer structure. The self-aligning production makes possible a component having precise patterning.
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"The Insulated Gate Transistor: An New Three-Terminal-MOS Controlled Bipolar Device," B. Jayant Baliga, et al. Jun. 6, 1984, pp. 821-827.
"Onset of Current Filamentation Ingto Devices." K. Lilja, H. Grunning. Jun. 11, 1990, pp. 398-406.
"MOS-Controlled Thyristors-A New Class of Power Devices." Victor A. K. Temple, Nov. 2, 1986, pp. 1609-1618.
Johansson Kenneth
Lilja Klas
Stockmeier Thomas
Asea Brown Boveri Ltd.
Ngo Ngan
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