Metal treatment – Stock – Ferrous
Patent
1983-01-04
1986-03-04
Terapane, John F.
Metal treatment
Stock
Ferrous
357 12, 357 15, 357 16, 357 89, 357 67, 148DIG72, 148DIG56, 148DIG140, 148DIG58, 01L 2988, 01L 2990, 01L 2948, H01L 2926
Patent
active
H00000299
ABSTRACT:
A TUNNETT (tunneling transit time) electronic device comprising a very thin injector uniformly doped at a high concentration, a thin drift region of lower doping of the same semiconductivity type, and a collector of high doping of the same semiconductivity type. A Schottky barrier is formed by placing a metal electrode on the injector and an ohmic contact may be made on the collector. In a preferred embodiment the injector is made of Ge grown on the drift region by vacuum epitaxy. The drift region is preferably GaAs grown by epitaxy on a GaAs collector.
REFERENCES:
patent: 3739243 (1973-06-01), Semichon et al.
patent: 3852794 (1974-12-01), Pearson et al.
patent: 3964084 (1976-06-01), Andrews, Jr. et al
patent: 4128733 (1978-12-01), Fraas et al.
patent: 4263605 (1981-04-01), Christou et al.
A. Christou and J. Davey, "Low Barrier Height Epitaxial Ge-GaAs Mixer Diodes"; Electronics Lett. vol. 15, No. 11, pp. 324-325, 1979.
Christou Aristos
Davey John E.
Ellis W. T.
Guffey W. R.
Locker Howard J.
Terapane John F.
The Government of the United States
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