Tunneling transistor

Details Tunneling transistor Tunneling transistor

1992-11-25

1994-09-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 26, 257 22, 257 14, H01L 31072, H01L 31109

Patent

active

053492021

ABSTRACT:
A tunneling transistor comprising an emitter layer, a barrier layer having a conduction band higher in energy than a conduction band of said emitter layer and a valence band lower in energy than a valence band of said emitter layer, and further having a thickness with which electrons can substantially tunnel the barrier layer, a collector layer having a conduction band lower in energy than the valence band of said emitter layer and a conductivity type opposite to said emitter layer, and further having a thickness with which quantum levels are substantially formed, a gate layer having a conduction band higher in energy than the conduction band of said layer and a valence band of said emitter layer, and further having a thickness with which the probability of electron tunneling is substantially greatly reduced, said layers been laminated in this order, and electrodes which form ohmic junctions on said emitter layer and said collector layer and an electrode which forms a Schottky junction on said gate layer.

REFERENCES:
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5113231 (1992-05-01), Soderstrom et al.
Longenbach et al.; "Resonant Interband Tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb Heterostructures"; Jul. 18, 1990; pp. 1554-1556.
"Quantum Functional Devices: Resonant-Tunneling Transistors, Circuits with Reduced Complexity, and Multiple-Valued Logic", IEEE Transactions on Electron Devices, vol. 16, No. 10, Oct. 1989, Federico Capasso et al.

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