Tunneling transfer devices

Oscillators – Relaxation oscillators

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357 16, 357 4, 331 941, 372 43, H01L 2714

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047454520

ABSTRACT:
Coupled quantum wells in which charge carriers shift from well to well by means of tunneling transfer. The quantum wells are created by disposing a material with lower carrier energy between layers of material with higher carrier energy. The spacing between wells is thin enough to allow tunneling transfer. The coupling of the wells displaces energy levels so that a system of N coupled wells has a spectrum of N energy levels. Under the proper conditions, transistions from one energy level to another result in the shift of charge carriers from one well to another. Because the tunneling transfer process is very fast, electronic devices capable of operating at terahertz frequencies are possible. Transistors, lasers, and detectors of electromagnetic radiation employing coupled quantum wells are disclosed.

REFERENCES:
patent: 3982207 (1976-09-01), Dingle et al.
patent: 4208667 (1980-06-01), Chang et al.
patent: 4348686 (1982-09-01), Esari et al.
patent: 4525731 (1985-06-01), Chappell et al.
Anderson, E., Modern Physics and Quantum Mechanics, W. B. Saunders Co., Philadelphia, 1971, pp. 174-176.
Price, Peter J. "Physics of Heterostructures and Heterostructure Devices" IBM Research Report, 4/19/83.
"A Field-Effect Transistor with a Negative Differential Resistance" by A. Kastalsky et al., IEEE Electron Device Ltrs., vol. EDL-5, No. 2, pp. 57-60 (1984).
"Velocity-Modulation Transistor (VMT)-A New Field-Effect Transistor Concept" by H. Sakaki, Japanese Journal of Applied Physics, vol. 21, No. 6, pp. L381-L383 (1982).
"Resonant Tunneling Through Quantum Wells at Frequencies up to 2.5 THz" by T. C. L. Sollner et al., Appl. Phys. Lett. 43 (6), pp. 588-590 (1983).
"A Proposal of Single Quantum Well Transistor (SQWT)-Self-Consistent Calculations of 2D Electrons in a Quantum Well with External Voltage" by C. Hamaguchi et al., Japanese Journal of Applied Physics., vol. 23, No. 3, pp. L132-L134 (1984).

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