Tunneling magnetoresistive (TMR) sensor having a magnesium...

Details Tunneling magnetoresistive (TMR) sensor having a magnesium... Tunneling magnetoresistive (TMR) sensor having a magnesium...

2007-07-03

2007-07-03

Renner, Craig A. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

10900487

ABSTRACT:
A tunneling magnetoresistive (TMR) sensor includes a first ferromagnetic (FM) layer (e.g. a sense or reference layer), a barrier layer formed over the first FM layer, and a second FM layer (e.g. a sense or reference layer) formed over the barrier layer. The barrier layer is made of magnesium-oxide (Mg—O). The sense and reference layers of the TMR sensor exhibit controlled magnetic properties, the barrier layer provides a low junction resistance-area product, and the TMR sensor exhibits a high TMR coefficient. The junction resistance is sufficiently low so as to prevent electrostatic discharge (ESD) damage to submicron-sized TMR sensors used for magnetic recording at ultrahigh densities.

REFERENCES:
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patent: 6219274 (2001-04-01), Shimazawa et al.
patent: 6335081 (2002-01-01), Araki et al.
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patent: 6452204 (2002-09-01), Ishiwata et al.
patent: 6600184 (2003-07-01), Gill
patent: 2002/0006020 (2002-01-01), Hasegawa

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