Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-11-06
2008-12-23
Lee, Eugene (Department: 2815)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S425000, C257S427000, C257S295000, C257SE21665, C257S421000
Reexamination Certificate
active
07468282
ABSTRACT:
A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer and the magnetization of the ferromagnetic n-type semiconductor layer. In this pin junction element, an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.
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Kawai Tomoji
Tanaka Hidekazu
Harness Dickey & Pierce PLC
Japan Science and Technology Agency
Lee Eugene
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